Requirements: English
Company: DAS Photonics
Region: Valencia , Valencian Community
About the role
DAS Photonics is building a new microfabrication facility for LNOI photonic devices and GaN-based power transistors, including hybrid integration using Micro Transfer Printing (TP). We are hiring Device Engineers / Technologists to lead the design and development of next-generation transistors and integrated photonic components.
In this position, you will define device architecture, support process flow development, and collaborate closely with process engineers and integration teams to enable in-house fabrication and product evolution.
Key Responsibilities
- Design and develop advanced GaN transistor architectures and/or LNOI photonic components (e.g., modulators, switches).
- Translate performance and application requirements into device specifications and layout.
- Support the definition of process flows aligned with cleanroom capabilities and equipment.
- Use simulation tools (TCAD, Lumerical, COMSOL) to guide design iterations and validate performance.
- Collaborate with fabrication and integration teams during prototyping and characterization.
- Evaluate design impact on packaging, test and reliability constraints.
- Generate documentation, design files and IP contributions.
- Provide technical leadership in design reviews and roadmap planning.
- Contribute to future technology and device strategy within DAS Photonics.
Qualifications & Skills
- Degree (preferably PhD) in Electrical Engineering, Photonics, Physics, or related.
- Experience in design and development of GaN power transistors and/or LNOI photonic devices.
- Knowledge of semiconductor physics, material properties, and processdesign interactions.
- Experience with simulation tools (e.g., Silvaco, Sentaurus, Lumerical, COMSOL).
- Ability to interface with process and packaging teams in a collaborative development environment.
- Familiarity with cleanroom environments and device fabrication constraints.
- Strong documentation and communication skills (English required, Spanish is a plus).
Desirable
- Experience with GaN HEMT, e-mode transistors or similar technologies.
- Background in LNOI photonic modulators or III-V photonic integration.
- Familiarity with hybrid integration techniques (e.g., TP or wafer bonding).
- Prior participation in prototyping cycles or cleanroom transfer-to-fab projects.