Requirements: English
Company: IC Resources
Region: Gorguja , Catalonia
I am recruiting an RF IC Design Engineer with expertise in Gallium Nitride technology. This is an exciting opportunity to join a cutting-edge team working on next-generation RF solutions. The role offers remote flexibility for engineers based in Spain. Responsibilities will include but are not limited to: * Design and develop RF ICs with a focus on GaN-based power amplifiers and LNAs. * Perform circuit-level design, simulation, and layout for RF ICs. * Optimize amplifier performance for efficiency, linearity, and power output. * Conduct EM simulations and RF measurements to validate designs. * Work closely with process engineers and layout teams to ensure design manufacturability. * Collaborate with system architects to define specifications and system integration. * Support product validation, characterization, and troubleshooting. I am looking for an individual with experience in some of the following areas: * Experience in RF IC design, with a strong focus on GaN technology. * Hands-on expertise in power amplifier and LNA design. * Strong understanding of RF circuit design principles, including impedance matching, stability analysis, and non-linear effects. * Proficiency in Cadence, ADS, HFSS, or other relevant RF design tools. * Experience with wafer-level characterization and measurement techniques. * Knowledge of RF packaging, parasitic extraction, and layout considerations. * Strong problem-solving skills and the ability to work independently. * Excellent communication skills in English. To be considered for this position, you must have experience in GaN-based RF solutions. No visa sponsorship is available. Please get in touch with Parm Shergill for more information.